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Introduction
Introduction to NVE GMR Sensors
In 1988, scientists discovered the “Giant Magneto Resistive” effect—a large change in electrical
resistance that occurs when thin, stacked layers of ferromagnetic and non-magnetic materials are
exposed to a magnetic field. Since then, many companies have sought to develop practical applications
for this intriguing technology. NVE Corporation has taken the lead by developing the first
commercially available products making use of GMR technology, a line of magnetic field sensors that
outperform traditional Hall Effect and AMR magnetic sensors.
NVE introduced its first analog sensor product in 1995. Since then, our product line has grown to
include several variations on analog sensors, the GMR Switch ? line of precision digital sensors, and
our newest products, the GT Sensors ? for gear tooth and encoder applications. In addition to these
products, NVE offers printed circuit board assemblies for pneumatic cylinder position and currency
detection applications as well as peripheral integrated circuits designed to work with our GMR sensors
in a variety of applications. Finally, NVE remains committed to custom product developments for
large and small customers in order to develop the best possible sensor for the customer’s application.
NVE magnetic sensors have significant advantages over Hall Effect and AMR sensors as shown in the
following chart. In virtually every application, NVE sensors outperform the competition—often at a
significantly lower installed cost.
Benefits:
Physical Size
Signal Level
Sensitivity
Temperature Stability
Power Consumption
Cost
GMR
Small
Large
High
High
Low
Low
HALL
Small
Small
Low
Low
Low
Low
AMR
Large
Medium
High
Medium
High
High
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